KTH Royal Institute of Technology, School of Electrical Engineering and Computer ScienceProject descriptionThird-cycle subject: Information and Communication TechnologyThe position will contribute to cutting-edge research on Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) and Insulated Gate Bipolar Transistor (IGBT) devices for next-generation power electronics applications. These devices are crucial for improving energy efficiency, performance, and reliability in industries such as renewable energy, electric vehicles, and industrial automation.DoktoranderPedagogik
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